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  sangdest microelectronics technical data green products data sheet n0873, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113  (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sangdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? SB1100 SB1100 schottky rectifier applications: z switching power supply z converters z free-wheeling diodes z reverse battery protection z disk drives z battery charging features: z schottky barrier chip z ideally suited for automatic assembly z low power loss, high efficiency z surge overload rating to 50a peak z for use in low voltage application z guard ring die construction z plastic case material has ul flammability z classification rating 94v-o z green products in compliance with the rohs directive z this is a pb ? free device z all smc parts are traceable to the wafer lot z additional testing can be offered upon request mechanical dimensions: in mm do-41 1.27(0.050) max flash(2 plcs) 5.21 (0.205) 25.4(1.00) min (2 plcs) 0.864 (0.034) 0.71 (0.028) dia (2 plcs) cathode band 2.70(0.106) 2.00(0.079) dia anode cathode 4.06 (0.160)
sangdest microelectronics technical data green products data sheet n0873, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113  (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sangdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? SB1100 marking diagram: where xxxxx is yywwl sb = device type 1 = forward current (1a) 100 = reverse voltage (100v) ssg = ssg yy = year ww = week l = lot number cautions molding resin epoxy resin ul:94v-0 ordering information: device package shipping SB1100 do-41 (pb-free) 5000pcs / reel for information on tape and reel specificat ions, including part orientation and tape si zes, please refer to our tape and reel p ackaging specification. maximum ratings: characteristics symbol condition max. units peak inverse voltage v rwm - 100 v max. average forward i f(av) 50% duty cycle @tc =105 rectangular wave form(l=0.375?) 1.0 a max. peak one cycle non-repetitive surge current i fsm 8.3 ms, half sine pulse 26 a
sangdest microelectronics technical data green products data sheet n0873, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113  (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sangdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? SB1100 electrical characteristics: characteristics symbol condition max. units v f1 @ 1.0a, pulse, t j = 25 0.85 max. forward voltage drop v f2 @ 1.0a, pulse, t j = 125 0.75 v max. reverse current i r1 @v r = rated vr t j = 25 1.0 ma typical junction capacitance cj @v r = 5.0 v, tc=25 f sig = 1mhz 80 pf * pulse width < 300s, duty cycle <2% thermal-mechanical specifications: characteristics symbol condition specification units max. junction temperature t j - -55 to +150 c max. storage temperature t stg - -55 to +150 c maximum thermal resistance junction to case r jc dc operation 15 c/w maximum thermal resistance, case to heat sink r ja dc operation 65 c/w approximate weight wt - 0.35 g case style do-41
sangdest microelectronics technical data green products data sheet n0873, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113  (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sangdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? SB1100
sangdest microelectronics technical data green products data sheet n0873, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113  (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sangdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? SB1100 disclaimer: 1- the information given herein, including the specifications and dimens ions, is subject to change without prior notice to impr ove product characteristics. before ordering, purchas ers are advised to contact the smc - san gdest microelectronics (nanjing) co., ltd sale s department for the latest version of the datasheet(s). 2- in cases where extremely high reliabilit y is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users? fail-safe prec autions or other arrangement . 3- in no event shall smc - sangdest microel ectronics (nanjing) co., ltd be liable for any damages that may result from an accid ent or any other cause during operation of the us er?s units according to the datasheet(s). smc - sangdest microelectronics (nanjing) c o., ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of infor mation, products or circuits descr ibed in the datasheets. 4- in no event shall smc - sangdest microel ectronics (nanjing) co., ltd be liable for an y failure in a semiconductor device or any secondary damage resulting from use at a va lue exceeding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or other rights of any third party or smc - sangdest microelectr onics (nanjing) co., ltd. 6- the datasheet(s) may not be reproduced or duplicated, in any form , in whole or part, without the expressed written permissio n of smc - sangdest microelectronics (nanjing) co., ltd. 7- the products (technologies) de scribed in the datasheet(s) are not to be provi ded to any party whose purpose in their applica tion will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or a ny third party. when exporting these products (technol ogies), the necessary procedures are to be taken in accordance with related laws a nd regulations..


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